Tip140, tip141, tip142, tip145, tip146, tip147 darlington. Storage temperature range t stg55 150 c electrical characteristics ta25c characteristic symbol test condition min. Npn s i l i c o n t r a n s i s t o r shantou huashan electronic devices co. H1061 datasheet, h1061 pdf, h1061 data sheet, h1061 manual, h1061 pdf, h1061, datenblatt, electronics h1061, alldatasheet, free, datasheet, datasheets, data sheet. Triple diffused silicon npn transistor designed for. Features complementary to 2sc2837 lapt linear amplifier power transistor high transition frequency bare lead frame. Complement to 2sa671 absolute maximum ratings t a25. September 2011 ksc2073 npn epitaxial silicon transistor.
Anyway, i understand the concept of a transistor, how it can be used for switching and i have tried it on a breadboard and wow i got it working etc. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. So thats great, but i dont really understand the datasheet information and what are the important bits. Offer h1061 hitachi from kynix semiconductor hong kong limited.
H1061 datasheet, h1061 datasheets, h1061 pdf, h1061 circuit. Toshiba transistor silicon pnp epitaxial type 2sa1837. Nov 02, 2015 h1061 datasheet npn transistor, vcbo100v pmc, datasheet, h1061 pdf, pinout, h1061 equivalent, h1061 data, h1061 circuit. Nov 18, 2018 d718 datasheet vcbo120v, 8a, npn transistor toshiba. H1061 pdf, h1061 description, h1061 datasheets, h1061 view. The datasheet shows the internals of the transistor, which looks like this a rough approximation using a typical npn r2 and r3 are internal to the transistor. Complementary silicon power darlington transistors stmicroelectronics preferred salestypes application linear and switching industrial equipment description the tip2 is a silicon epitaxialbase npn power transistor in monolithic darlington. Unit output cutoff current i ooff v o50v, v i0 500 na dc current gain g i v o5v, i o10ma 70 120 output voltage v oon i o10ma, i i0. Complement to 2sc1061 absolute maximum ratings t a25. Toshiba toshiba corporation 12 discrete semiconductors 2sa2 transistor silicon pnp epitaxial type pct process for general purpose switching and ampli. H1061 npn transistor datasheet pdf provided by datasheet pdf search for h1061. Sth1061 datasheet, equivalent, cross reference search. Specifications may change in any manner without notice. D718 datasheet vcbo120v, 8a, npn transistor toshiba.
H1061 triple diffused silicon npn transistor components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other. Transistor specifications explained electronics notes. Toshiba c3421 npn transistor electronics forum circuits. Characteristic symbol rating unit collectorbase voltage collectoremitter voltage emitterbase voltage collector current dc collector dissipation tc25. Fall time ic, collector current ma 20 30 50 70 100 10 5. Preliminary first production datasheet contains preliminary data. D2061 datasheet pdf 60v, 3a, npn transistor, d2061 pdf, d2061 pinout, equivalent, d2061 schematic, d2061 manual, data, 2sd2061. H1061 datasheet triple diffused silicon npn transistor. Silicon npn power transistors 2sc1061 description with to220 package low saturation voltage complement to type 2sa671 note. The gain of the 2sb688r will be in the range from 55 to 110, 2sb688o ranges from 80 to 160. Savantic semiconductor product specification 3 silicon npn power transistors 2sc4242 package outline fig. Savantic semiconductor product specification 2 silicon npn power transistors 2sc3150 characteristics. Pmc, alldatasheet, datasheet, datasheet search site for. Specification mentioned in this publication are subject to change.
R1 is not part of the transistor, its just a typical load to work against for the simulation. The 2sb688 transistor might have a current gain anywhere between 55 and 160. Transistor datasheet, transistor pdf, transistor data sheet, transistor manual, transistor pdf, transistor, datenblatt, electronics transistor, alldatasheet, free. A power dissipation ptot 25 w o junction temperature tj 150 c o storage temperature range ts 45.
Unit h1061a hfe 35 70 h1061b hfe 60 120 h1061c hfe 100 200 h1061d hfe 160 320 hfe 35, st h1061 npn plastic power transistor low frequency power amplifier. Suggested resale price per unit usd for budgetary use only. Complementary low voltage transistor stmicroelectronics. According to the datasheet, the typical values are 2v for on. M absolute maximum ratings ta25 c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo60 v collectoremitter voltage vceo50 v collectoremitter voltage vebo5 v dc ib1 a base current pulse ibp2 a. H1061 triple diffused silicon npn transistor components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. H1061 transistor triple diffused silicon npn 3a 100v to220. Pmc, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
Vce limits of the transistor that must be observed for reliable operation. H945 datasheet, equivalent, cross reference search. Transistor h1061 datasheet, cross reference, circuit and application notes in pdf. Datasheet identification product status definition advance information formative in design datasheet contains the design specifications for product development. Transistor silicon npn epitaxial type pct process audio frequency voltage amplifier. C1815 datasheet, c1815 pdf, c1815 data sheet, datasheet, data sheet, pdf. If the checkbox is invisible, the corresponding document cannot be downloaded in batch. Collector base voltage collector emitter voltage emitter base voltage collector current dc collector current peak collector power dissipation junction temperature storage temperature.
Fairchild and our authorized distributors will stand behind all warranties and will appropriately addr ess any warranty issues that may arise. The npn types are the bd5 and bd9, and the complementary pnp types are the bd6 and bd140. Pnp resistorequipped transistor see simplified outline, symbol and pinning for package details. I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation sot89 pc 550 mw to92 750.
Pmc triple diffused silicon npn transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. H1061 triple diffused silicon npn transistor designed for low frequency power amplifier maximum ratings characteristic symbol value unit collector base voltage v 100 v cbo collector emitter voltage v 80 v ceo emitter base voltage v 5 v ebo collector current dc i 4 a c collector current peak i 8 a c collector power. H1061 datasheet, h1061 pdf, replacement, equivalent, data sheets, h1061 pinout, schematic, circuit. These epitaxial planar transistors are mounted in the sot32 plastic package. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. They are designed for audio amplifiers and drivers utilizing complementary or quasicomplementary circuits.
Transistor manufacturers issue specification sheets for their transistors which are typically found on the internet, although years ago engineers used to study data books to find out the information. H1061 datasheet npn transistor, vcbo100v pmc, datasheet, h1061 pdf, pinout, h1061 equivalent, h1061 data, h1061 circuit. H945 applications the h945 is designed for driver stage of af amplifier and low speed switching. The product has constant h fe characteristics in a wide current range, providing highquality audio sounds. This transistor designed for use in generalpurpose amplifier and switching application. For electronic circuit design, selecting the right transistor will need several of the transistor parameters to match the requirements for the. In certain cases, the quoted collector current may be exceeded. High voltage fastswitching npn power transistor stmicroelectronics. H1061 datasheet, equivalent, cross reference search. Pc 40 w junction temperature tj 150 c storage temperature tstg 55150 c.1098 1567 503 351 191 1386 1572 454 638 699 1506 507 1152 1358 848 539 320 301 1096 1329 1540 746 1639 1013 195 1014 1277 376 774 669 352 1068 688 1163 540 613 173 1140 812 1498 843 542 475 52 790 1334 730 617